Resist Etching with New Developed Magnetron Plasmas.

Diagnostics of etching plasmas *

Radio-frequency excited, low-pressure plasmas in halogen-containing gases are widely used to etch submicronic features in a range of materials during integrated circuit manufacture. Costly process-drift problems are often caused by the ubiquitous deposition of polymer layers on the reactor walls. Simple and robust sensors of the reactor performance are needed to monitor and manage these effects...

Etching with Electron Beam Generated Plasmas

Luminescence properties of submicron features fabricated by using magnetron reactive ion etching with different sample biases

Deep-etch-defined GaAs/Al0.3Ga0.7As square features of multiquantum well material, with dimensions as small as 160 nm, have been fabricated using magnetron reactive ion etching ~MIE!. Luminescence spectroscopy shows confinement of charge carriers to the features’ center. The effects of rf power and etching time on the luminescence efficiency of these features and its concomitant etch-induced da...

Ultradeep fused silica glass etching with an HF- resistant photosensitive resist for optical imaging applications

Microfluidic and optical sensing platforms are commonly fabricated in glass and fused silica (quartz) because of their optical transparency and chemical inertness. Hydrofluoric acid (HF) solutions are the etching media of choice for deep etching into silicon dioxide substrates, but processing schemes become complicated and expensive for etching times greater than 1 hour due to the aggressivenes...

A Review of SiC Reactive Ion Etching in Fluorinated Plasmas

Research and development in semiconducting silicon carbide (SiC) technology has produced significant progress in the past five years in many areas: material (bulk and thin film) growth, device fabrication, and applications. A major factor in this rapid growth has been the development of SiC bulk crystals and the availability of crystalline substrates. Current leading applications for SiC device...